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Local built-in potential on grain boundary of Cu(In,Ga)Se2 thin films

Identifieur interne : 00A492 ( Main/Repository ); précédent : 00A491; suivant : 00A493

Local built-in potential on grain boundary of Cu(In,Ga)Se2 thin films

Auteurs : RBID : Pascal:04-0184219

Descripteurs français

Pascal (Inist)
- 7330, 7350P, 6172M, 6837P, 7280J, Etude expérimentale, Cuivre composé, Indium composé, Gallium composé, Semiconducteur ternaire, Couche mince semiconductrice, Joint grain, Tension photoélectrique surface, Conductivité électrique, Potentiel surface, Travail sortie, Microscopie champ proche.

English descriptors

KwdEn :
- Copper compounds, Electrical conductivity, Experimental study, Gallium compounds, Grain boundaries, Indium compounds, Scanning probe microscopy, Semiconductor thin films, Surface photovoltage, Surface potential, Ternary semiconductors, Work functions.

Abstract

We report on a direct measurement of two-dimensional potential distribution on the surface of photovoltaic Cu(In,Ga)Se₂ thin films using a nanoscale electrical characterization of scanning Kelvin probe microscopy. The potential measurement reveals a higher surface potential or a smaller work function on grain boundaries of the film than on the grain surfaces. This demonstrates the existence of a local built-in potential on grain boundaries, and the grain boundary is positively charged. The local built-in potential on the grain boundary is expected to increase the minority-carrier collection area from one to three dimensional. In addition, a work function decrease induced by Na on the film surface was observed. © 2004 American Institute of Physics.

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<front><div type="abstract" xml:lang="en">We report on a direct measurement of two-dimensional potential distribution on the surface of photovoltaic Cu(In,Ga)Se<sub>2</sub>
 thin films using a nanoscale electrical characterization of scanning Kelvin probe microscopy. The potential measurement reveals a higher surface potential or a smaller work function on grain boundaries of the film than on the grain surfaces. This demonstrates the existence of a local built-in potential on grain boundaries, and the grain boundary is positively charged. The local built-in potential on the grain boundary is expected to increase the minority-carrier collection area from one to three dimensional. In addition, a work function decrease induced by Na on the film surface was observed. © 2004 American Institute of Physics.</div>
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Local built-in potential on grain boundary of Cu(In,Ga)Se2 thin films

Local built-in potential on grain boundary of Cu(In,Ga)Se2 thin films

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri